2C16 ghz low noise gallium arsenide fet technical data ATF-13736 36 micro-x package features ? low noise figure: 1.8 db typical at 12 ghz ? high associated gain: 9.0 db typical at 12 ghz ? high output power: 17.5 db typical at 12 ghz ? cost effective ceramic microstrip package ? tape-and-reel packaging option available [1] electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. nf o optimum noise figure: v ds = 2.5 v, i ds = 20 ma f = 8.0 ghz db 1.5 f = 12.0 ghz db 1.8 2.2 f = 14.0 ghz db 2.1 g a gain @ nf o : v ds = 2.5 v, i ds = 20 ma f = 8.0 ghz db 11.5 f = 12.0 ghz db 8.0 9.0 f = 14.0 ghz db 7.0 p 1 db power output @ 1 db gain compression: f =12.0 ghz dbm 17.5 v ds = 4 v, i ds = 40 ma g 1 db 1 db compressed gain: v ds = 4 v, i ds = 40 ma f = 12.0 ghz db 8.5 g m transconductance: v ds = 2.5 v, v gs = 0 v mmho 25 55 i dss saturated drain current: v ds = 2.5 v, v gs = 0 v ma 40 50 90 v p pinch-off voltage: v ds = 2.5 v, i ds = 1 ma v -4.0 -1.5 -0.5 note: 1. refer to packaging section tape-and-reel packaging for surface mount semiconductors. description the ATF-13736 is a high perfor- mance gallium arsenide schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. its noise figure makes this device appropri- ate for use in the gain stages of low noise amplifiers operating in the 2-16 ghz frequency range. this gaas fet device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
2 ATF-13736 typical performance, t a = 25 c ATF-13736 absolute maximum ratings absolute symbol parameter units maximum [1] v ds drain-source voltage v +5 v gs gate-source voltage v -4 v gd gate-drain voltage v -6 i ds drain current ma i dss p t power dissipation [2,3] mw 225 t ch channel temperature c 175 t stg storage temperature [4] c -65 to +175 thermal resistance: q jc = 400 c/w; t ch = 150 c liquid crystal measurement: 1 m m spot size [5] notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case temperature = 25 c. 3. derate at 2.5 mw/ c for t case > 85 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 175 c. 5. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section for more information. part number ordering information part number devices per reel reel size ATF-13736-tr1 1000 7" ATF-13736-str 10 strip frequency (ghz) nf o (db) figure 3. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 4 v, i ds = 40 ma. frequency (ghz) gain (db) 2.0 1.5 1.0 0.5 0 16 14 12 10 8 6 g a (db) 6.0 10.0 8.0 12.0 14.0 16.0 g a nf o |s 21 | 2 msg msg mag 2.0 4.0 6.0 8.0 10.0 12.0 16.0 25 20 15 10 5 0 figure 1. optimum noise figure and associated gain vs. frequency. v ds = 2.5 v, i ds = 20 ma, t a = 25 c. figure 2. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 2.5 v, i ds = 20 ma. frequency (ghz) gain (db) |s 21 | 2 msg mag 2.0 4.0 6.0 8.0 10.0 12.0 16.0 25 20 15 10 5 0 ATF-13736 noise parameters: v ds = 2.5 v, i ds = 20 ma freq. nf o g opt ghz db mag ang r n /50 4.0 1.1 .71 102 .10 6.0 1.3 .55 147 .07 8.0 1.5 .46 -144 .19 12.0 1.8 .50 -40 .88 14.0 2.1 .52 -2 1.17
3 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds = 2.5 v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 2.0 .94 -46 11.0 3.56 128 -26.4 .048 55 .59 -36 3.0 .86 -70 10.2 3.23 109 -25.2 .055 40 .57 -47 4.0 .84 -90 9.8 3.08 91 -23.1 .070 31 .56 -55 5.0 .77 -110 9.6 3.02 69 -20.9 .090 18 .52 -63 6.0 .68 -135 9.9 3.14 51 -19.3 .109 7 .47 -75 7.0 .59 -170 9.9 3.13 24 -18.0 .126 -12 .39 -92 8.0 .54 149 9.5 2.99 -1 -17.6 .132 -27 .30 -112 9.0 .56 112 8.8 2.75 -22 -16.9 .143 -43 .19 -121 10.0 .58 86 8.1 2.53 -43 -16.4 .152 -58 .11 -140 11.0 .60 63 7.6 2.41 -66 -16.5 .149 -73 .09 92 12.0 .64 39 7.0 2.24 -90 -17.1 .140 -81 .15 47 13.0 .68 20 6.4 2.08 -106 -17.6 .132 -90 .19 21 14.0 .70 9 6.0 1.99 -130 -18.0 .126 -97 .19 -3 15.0 .72 -1 5.2 1.83 -145 -18.2 .123 -111 .15 -26 16.0 .74 -17 4.6 1.70 -177 -18.4 .120 -129 .11 -34 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds =4 v, i ds = 40 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 2.0 .88 -44 13.5 4.73 130 -26.4 .048 64 .67 -28 3.0 .76 -68 13.0 4.47 107 -24.9 .057 52 .61 -39 4.0 .68 -90 12.4 4.19 86 -22.5 .075 39 .57 -46 5.0 .56 -113 12.0 4.00 66 -21.0 .089 32 .52 -52 6.0 .42 -145 11.8 3.90 44 -19.8 .102 21 .44 -61 7.0 .37 161 11.5 3.74 20 -18.6 .117 9 .31 -75 8.0 .47 116 10.5 3.36 -3 -17.9 .128 -5 .17 -95 9.0 .57 90 9.4 2.96 -23 -17.2 .138 -19 .05 -143 10.0 .63 70 8.9 2.77 -41 -17.4 .135 -28 .06 128 11.0 .69 51 7.9 2.47 -63 -17.7 .131 -39 .17 100 12.0 .77 33 7.1 2.26 -82 -18.0 .126 -52 .26 75 13.0 .82 21 6.0 2.00 -101 -18.6 .118 -65 .35 62 14.0 .85 13 5.4 1.86 -117 -19.2 .110 -75 .39 54 15.0 .83 1 4.8 1.73 -134 -19.7 .104 -83 .41 49 16.0 .81 -17 4.4 1.65 -154 -19.8 .102 -103 .42 41 a model for this device is available in the device models section.
www.hp.com/go/rf for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1998 hewlett-packard co. obsoletes 5965-8722e printed in u.s.a. 5967-5771e (5/98) 36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 137
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